D13009 transistor equivalent
D13009 transistor equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC1845 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1845 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. These substitutes, such as the 13005A and 13009 transistors, closely match the MJE13001 in both physical and electrical properties, making them ideal alternatives. 1 below has an example of markings. Related items. order: starting at ONE piece, you can buy as many as you want. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC183 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC183 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Size:57K 1 c3198. Customer Reviews Specifications Description Store You may also like Customer Reviews (0) Specifications. Account 13003 Transistor Datasheet pdf, 13003 Equivalent. Size:115K jdsemi p13009. Size:113K jdsemi 13005a. 2 W |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V |Id|ⓘ - Maximum Drain Current: 0. Select the department you MS Enterprise 1 Pair New D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A : Amazon. in: Industrial & Scientific. Equivalent Type Designator: 2300 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 1. 100 resultados. High Voltage Fast-Switching NPN Power Transistor More results. 2N2222A Brief Description. - Good operating characteristics, easy to breakdown. Description: - Model: D13009 - 13009 transistor high positive and negative voltage and power. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SA726 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA726 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Page: 1 Pages. or Best Offer +C $5. lompat ke konten utama. Part# D13009: Manufacturer: 国产: Package: TO-3P: Datasheet: Availability: In Stock Can ship immediately: Price: starting at US $4. Low-frequency small-signal equivalent circuit model 2. FAST-SWITCHING NPN POWER MJ3001 Transistor Datasheet pdf, MJ3001 Equivalent. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC3858 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC3858 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 200 W 2SK170 MOSFET. , LTD. I've read their datasheets but I'm not an expert, so I need your help :) 2N3904 Transistor specifications table Equivalent. NPN -65°C~200°C TJ 250μA 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole . Description. TO-220. Size:189K sanyo 2sc2999. Size:222K 1 xw6821 xw6822 xw6822a xw6823 xw6823a xw13001 sxw13001 xw13002 sxw13002 xw13003 sxw13003 sxw13005 sxw13007 BD139 Transistor Equivalent Substitute - Cross-Reference Search BD139 Datasheet (PDF) . 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA We have a lot of products and only show a small number of products on the website. Computers and Accessories. D13009K. SGS-THOMSON PREFERRED SALESTYPE. RP13009 www. Brand : acra. 6. Log In. BD139 Equivalent NPN Transistors. DataSheet4U. It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers. APT13005D, MJE13007 . BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2N4037 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N4037 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 1 W 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. MJE13009X9(BR3DD13009X9P) Rev. BC547 transistor has a gain value of 110 to 800, this value determines the TABLE OF 2N SERIES TRANSISTOR EQUIVALENTS 2N1003 2N1004 ⇒ AF124 AF127 AF200 2N1005 2N1006 ⇒ BC168 BC238 BC548 2N1007 ⇒ 2N1548 AD149 AUY20 MPEG decompression - DA conversion to get analogue signal (unless you use digital display). com 4-1 2024. Ir para resultados. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC1740 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1740 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Size:116K jdsemi 13005d. Collector maximum DC power Pcm_W: 100W. 2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - MJE13001G-x-AB3-A-R SOT Part #: D13009. Opens in a new window or tab. As complementary type the PNP transistor 9012 is recommended. Reemplazo. 03 AHFE at 10 V - 150 mA > 300Operating temperature range -65C to +200C Hi-Rel NPN dual matched bipolar transistor TO-77 LCC-6 Linear gain characteristics ESCC qualified European preferred part list - EPPLFigure 1. Size:114K jdsemi 13005. BC549, BC636, BC639, 2N2222 TO-92, 2N2222 TO-18, 2N2369, 2N3055, 2N3904, 2N3906, 2SC5200 . MJ3001 Datasheet. : Min. Size:165K cn sptech mj15003. Description ( DataSheet : www. D882 . Similar Description - 13009: Manufacturer: Part # Datasheet: Description: Shenzhen Jingdao Electr BU103A: 115Kb / 3P: Bipolar Junction Transistor BU103BD: 117Kb / 3P: Bipolar Junction Transistor BU202DL: 116Kb / 3P: Bipolar Junction Transistor BU102D: 116Kb / 3P: Bipolar Junction Transistor Buy 10Pcs/lot D13007K D13009K TO-220 13009K 13007K D13007 D13009 transistor at Aliexpress for Find more and Enjoy Free Shipping 13009 Datasheet, Equivalent, Cross Reference Transistor Catalog MJE13009 NPN Transistor Datasheet, Pinout, Features Applications The Engineering Projects Features / Technical Specifications: Package Type: TO-92 Transistor Type: NPN Max Collector Current(IC): 50mA Max Collector-Emitter Voltage (VCE): 25V Max Collector-Base Voltage (VCB): 40V Max Emitter-Base Voltage (VBE): 4V Max Collector Dissipation (Pc): 350 Milliwatt Max Transition Frequency (fT): 400 to 1100 MHz (See Notes Below) Minimum & MJE13001 Equivalent. Switching Power Supply Core Accessories. Milhares de This is an FM radio receiver. Delivering to Mumbai 400001 Update location Industrial & Scientific. Todos los transistores. D13009K is an NPN bipolar junction transistor that is a high voltage fast switching power device. The MJE13001 is an NPN bipolar transistor featuring a high breakdown voltage of 600V between the collector and emitter and a medium emitter current of 200mA. Hello, sign in. 10pcs DI3009K D13O09K D130O9K D13009K TO247 Transistor #A6-8. Importantly, our device operates in a nonvolatile manner at room temperature and with the electric field gating. They are particularly SWITCHMODE Series NPN Silicon Power Transistors. . The analoguie video signal that gets digitized can be practically from any video source, MJ15003 Transistor Equivalent Substitute - Cross-Reference Search MJ15003 Datasheet (PDF) . 56F 0. id akan membahas persamaan transistor 13009 dan datasheetnya. Which one of the following transistors is more equivalent to Q1 ? BC547. It is an NPN transistor that is part of the broader MJE series known for their efficiency in high-power switching environments. Category: Transistors. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current 13005D Transistor Equivalent Substitute - Cross-Reference Search 13005D Datasheet (PDF) . Manufacturer: Fairchild Semiconductor. Size:24K sanken-ele 2sc4468. The high breakdown voltage and current-carrying capability make it particularly suited for low-power SMPS and lamp ballasts. C Feb. 2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0. 13009 High Voltage Power Transistor ( NPN ) Rated 4. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC1000 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1000 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. R13005A www. Componentes Eletrônicos. 00. 1μμ DC 10 s 100 s 1ms ASEMI NPN Silicon Transistor? CURRENT 12. 6. Parameters and Characteristics. 5 W The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 2N4037 Transistor Datasheet pdf, 2N4037 Equivalent. Product profile1. FREE . As complementary type the NPN transistor 9013 is recommended. 00 / piece Buy Now All prices are unit prices in United States Dollars (USD). Skip to main content. EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO BD139 Transistor Equivalent Substitute - Cross-Reference Search BD139 Datasheet (PDF) . Recommended for you. Equivalent Type Designator: 2SK170 Type of Transistor: JFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0. 2SC1740 Datasheet. s9014. Transistors I. BD136, BD138, BD140 . This transistor is available in Through-hole and a wide variety of SMD packages(SOT23, SOT223, etc) with TO-92 being the most popular one. 03 ADatasheet - production dataFeaturesBVCEO 60 VIC (max) 0. Page: 5 Pages. 15 W Maximum Collector-Base Voltage |Vcb|: 25 V Maximum Collector-Emitter Voltage |Vce|: 20 V Maximum Emitter-Base Voltage |Veb|: 25 V Maximum Collector Current |Ic max|: 0. Ask the publishers to restore access to 500,000+ books. Title 621. Collector-Emitter Voltage (Vceo): 400V. Size:195K sunroc alj13001. This tiny Transistor is using as a general purpose switching circuit and signal amplification. Select the department you want Entdecke NPN TO-3P D13009 Transistor High Voltage Power Switch Valve 2 Piec #F7“ in großer Auswahl Vergleichen Angebote und Preise Online kaufen bei eBay Kostenlose Lieferung für viele Artikel! 2SC1969 Transistor Equivalent Substitute - Cross-Reference Search 2SC1969 Datasheet (PDF) . Select the department you MJE13007 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITYAPPLICATIONS SWITCHING REGULATORS MOTOR CONTROLDESCRIPTION32The MJE13007 is a silicon multiepitaxial mesa1NPN power transistor mounted in Jedec TO-220plastic package. in. 2SD1071 Datasheet. 67 shipping. or Best Offer +C $10. 2%. TIP31C, SL100, S8050, BC547, 2N2222, 2N4401 . Similar Part No. 52) 13003A Transistor Equivalent Substitute - Cross-Reference Search 13003A Datasheet (PDF) 0. com ) NPN :、。 D13009 C B E (Ta=25℃) - - - (Ta=25℃) - - - - - - - HFE(1) (Tc=25℃) (Ta=25℃) VCBO VCEO VEBO IC IB PD Tj 700 400 9 12 6 100 2 150 V V V A A W ℃ Tstg -55-150 ℃ B C E HFE(1) Vce=5 V,Ic=5. Key Characteristics: Type: NPN Transistor. Brand: MENT. Return Policy . This component contains three terminals named base, Description: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. The NPN devices are preferred over PNP devices for a range of switching applications because the mobility of electrons is better than the mobility of holes. Description: NPN Silicon Bipolar Transistor. • Suitable for Electronic Ballast and Switching Mode Equivalência de transistores, circuitos integrados, diodos 13009. REFRACTORY/GOLD METALLIZATION. Similar Description - D13009K: Manufacturer: Part # Datasheet: Description: STMicroelectronics: BUL312FP: 149Kb / 6P: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUL742: 112Kb / 5P: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BULB39D: 191Kb / 6P: HIGH International transistor equivalents guide 1. 2 Results. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current BC313 Transistor Datasheet pdf, BC313 Equivalent. / Equivalent Circuit (10 pcs) D13009K TO-220 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR D13009 13009K 13009 TO220. The MJE13001 transistor can be effectively replaced by several equivalent models, including the APT13005D and MJE13007, among others. Similar Description - J13009-2: Manufacturer: Part # Datasheet: Description: Fairchild Semiconductor: FJPF3305: 80Kb / 5P: High Voltage Switch Mode Application MJE13007F: 55Kb / 5P: High Voltage Switch Mode Application SemiHow Co. Cameras, std13003 high voltage fast-switching npn power transistor reverse pins out vs standard ipak (to-251) / dpak (to-252) packages medium voltage capability low spread of dynamic parameters minimum lot-to-lot spread for reliable operation very high switching speed surface-mounting dpak (to-252) power package in tape & reel (suffix Transistor-Vergleichstypen / Vergleichstabelle. 2 A Max TT2190 Transistor Datasheet pdf, TT2190 Equivalent. Brand New . Equivalente. pdf SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJ15003DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = 5AFE CWide Area of Safe OperationComplement to the PNP MJ15004APPLICATIONSDesigned for high power audio,disk head positioners andother linear applications. 1 W MOSFET Equivalent Circuit Models October 18, 2005 Contents: 1. 1. s8550. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC313 Datasheet, Equivalent, Cross Reference Search Type Designator: BC313 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. BC537; BC538; 2N4401; P2N2222A; BC547; BC548; Datasheet. Returns Policy . 2SA726 Datasheet. Material of Transistor: Si. ON Semiconductor. Collector 3. Suitable For Switching Power Supply Computer Power Industrial Power Supply Power Supply Manufacturers And Maintenance Shop Most Commonly Used Components Ect. Features / Technical Specifications. 2N2222A is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to Equivalente. Transistor 13009 adalah transistor NPN daya tinggi yang digunakan untuk aplikasi daya tinggi seperti dalam rangkaian driver motor dan switching power supply. C $7. 012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 11-2 TIP41 Transistor Datasheet pdf, TIP41 Equivalent. Cross-Reference Search Result (Equivalent Transistors) Type: Code: 100DA025D 100T2 101NU70 101NU71 102NU70 102NU71 103NU70 103NU71 104NU70 104NU71 104T2 105NU70 106NU70 1074GE 107NU70 108T2 109T2 10AM20 111T2 111T2‑18 1129NTV1 1165905 121‑1003 121‑1019 121‑1029 121‑1029‑01 121‑1033 121‑1037 D13009: 453Kb / 1P: NPN Silicon Bipolar Transistor More results. MJ15003G. 125 W BC547 Transistor Equivalent. Emitter 2. Buy It Now. , LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The J13009-2 Product details. Size:100K motorola bd135 bd137 bd139. BC449 Datasheet, Equivalent, Cross Reference Search Type Designator: BC449 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. jdsemi. in: Home Improvement. EASY Returns & Exchange. Sponsored. They are Description: NPN Silicon Bipolar Transistor. INCHANGE Semiconductorisc Silicon NPN RF Power Transistor 2SC1969DESCRIPTIONWith TO-220 packagingReliable performance at higher powersAccurate reproduction of Input signalGreater dynamic rangeMinimum Lot-to-Lot Get the best deals for Transistor D13009 at eBay. 2N2920AHRHi-Rel NPN dual matched bipolar transistor 60 V, 0. Size:175K st st13009. 1. 30 4. 05 November 2021. Condition. In stock. File Size: 43Kbytes. / Features High Speed Switching / Part #: D13009K. D13007K Datasheet NPN Transistor, 400V, 8A, 3DD13007K. e. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i. pdf March 2007FJP13009High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011. The analoguie video signal that gets digitized can be practically from any video source, for Buy 10Pcs/lot D13007K D13009K TO-220 13009K 13007K D13007 D13009 transistor at Aliexpress for Find more and Enjoy Free Shipping . Electronic Component Catalog. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC109 Datasheet, Equivalent, Cross Reference Search Type Designator: BC109 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. asemi99. 1 A Tjⓘ - Maximum Junction Temperature: 120 °C Rdsⓘ - Maximum Drain-Source On-State Resistance: 35 Ohm . 7A. 69. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC2312 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC2312 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 25 W 2SD389 Transistor Datasheet pdf, 2SD389 Equivalent. Principales características Número de Parte: MJE13009 Material: Si Polaridad de 2N2907 Equivalent Transistors. This chip is mainly used in View results and find 13009 transistor equivalent datasheets and circuit and application notes in pdf format. BD139 Transistor Pinout, Features, Equivalent Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SB175 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SB175 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. : Shipping In NPN transistors current flows from the collector to emitter terminal while in the case of PNP transistor current flows from emitter to collector terminal. Switching power accessories. Equivalent Type Designator: 2SK125 Type of Transistor: JFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0. Polarity: NPN. E13005-225 Datasheet. D13009 TO-3P 国产: Mfr. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SD389 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SD389 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 25 W 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Datasheet pdf. or The company's product portfolio includes a variety of diodes, such as switching, zener, and Schottky diodes, as well as MOSFETs and bipolar transistors. 40 4. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SD1071 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SD1071 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 40 W Part #: 3DD13009E. 2. It is intended to be used in applications requiring medium voltage capability and high switching speeds. High Switching Speed nar transistor. 400 V A SMD/SMT NPN Bipolar Transistors BJT Datasheets Equivalência de transistores, circuitos integrados, diodos 13009. 70C 12. MOSFET. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22 E13005-225 Transistor Datasheet pdf, E13005-225 Equivalent. We will respond to you very promptly. pdf UNISONIC TECHNOLOGIES CO. R13005 www. 5 overall 4. Description: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. 2n5401. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, Note: Complete Technical Details can be found at the BD139 transistor datasheet provided at the bottom of this page. TO-220It is are March 2007FJP13009High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011. 2n5551. 3 W 2SD1071 Transistor Datasheet pdf, 2SD1071 Equivalent. -2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. Size:82K cdil c100 d100. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22 13009 MJE13009 Transistor Pinout, Equivalents, Uses, Specs, Features and Other Info, Buy (10 pcs) D13009K TO-220 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR D13009 13009K 13009 TO220 at Aliexpress for Find more and isc silicon npn power transistor jilin sino-microelectro 3dd13009k-o-c-n-b 546kb / 5p: high voltage fast-switching npn power transistor 3dd13009m 512kb / 5p: high voltage fast-switching npn power transistor 3dd13009m-o-c-n-b 512kb / 5p: high voltage fast-switching npn power transistor 3dd13009n 366kb / 7p: high voltage fast-switching npn P13009 Transistor Equivalent Substitute - Cross-Reference Search P13009 Datasheet (PDF) . Datasheet: 546Kb/5P. 2SC183 Datasheet. Die Transistor-Vergleichsdatenbank enthält alle Vergleichstypen eines Transistors und zeigt diese auf Anfrage an. notifikasi. DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N3019NPN medium power transistor1997 Jun 19Product specificationSupersedes data of September 1994File under Discrete Semiconductors, 1 Pair New d13009K Transistor d13009 NPN TO3- 3 Pins 12A. TIP41 Datasheet. pdf SUNROC ALJ13001 TRANSISTOR (NPN) TO-92 FEATURES 1. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 3DD207 Datasheet, Equivalent, Cross Reference Search Type Designator: 3DD207 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 50 W 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. Transistores. Internal schematic 2SC2999 Transistor Equivalent Substitute - Cross-Reference Search 2SC2999 Datasheet (PDF) . 02 29 July 2010 Product data sheet1. Aplic. Part #: D13009K. 9 ISBN 0 85934 060 0 Printed and Manufactured in Great Britain by Cox & Wyman Ltd. • High Voltage Capability. 35 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 0. The collector current of this device is 12A which projects it can endure load under 12A. BC313 Datasheet. Collector (C) 1 www. Collector maximum allowable DC current Icm: 12A. 24. Manufacturer: List of Unclassifed Manufacturers. Size:196K inchange semiconductor 2sc1969. Kimna. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 13003 Datasheet, Equivalent, Cross Reference Search Type Designator: 13003 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 20 W Maximum D13009 TO-3P 国产: Mfr. This article will introduce the Datasheet, Pinout, Equivalent and Uses of S9012 Transistor in detail, so that you can have a more comprehensive understanding of this product. COLLECTOR 3. Add to Wishlist. It is widely employed for switching and amplification purposes. Description Reviews (6) Reconditioned original. PWM signal generation. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS MMBT3904 Datasheet, Equivalent, Cross Reference Search Type Designator: MMBT3904 SMD Transistor Code: 1A_1AM_1N_7Ap_7At_7AW_K1N Material of Transistor: Si Polarity: D100 Transistor Equivalent Substitute - Cross-Reference Search D100 Datasheet (PDF) . This is a Bipolar PNP transistor available in metal can package, having a high value of current 600mA with low voltage of 40v. , LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0. C $10. 3 sold. Manufacturer: JILIN SINO NPN Silicon Bipolar Transistor. As complementary type the PNP transistor 2SC183 Transistor Datasheet pdf, 2SC183 Equivalent. 13009 or MJE13009 is a high voltage NPN power transistor designed to use in high voltage and other applications. TL431. Unfortunately, Variacs and their equivalents are horribly expensive, at least from some sources! If you get a used one, see that the contact area of the winding is undamaged; you might need to remove a knob and some covers to see it. Beli Transistor D13009 3DD13009 3DD 13009 OF AN Terbaru Harga Murah di Shopee. FREE Delivery Across Australia. 12N50 Datasheet. 2SD389 Datasheet. Applications. 18. Ngoài ra E13009 còn được sử dụng làm sò công suất trong các thiết bị điện tử công suất lớn Thông số kỹ thuật: Điện áp VCBO: 700V Điện áp VCEO: 400V Điện áp 3DD13005MD-O-Z-N-C Datasheet, Equivalent, Cross Reference Search Type Designator: 3DD13005MD-O-Z-N-C SMD Transistor Code: D13005MD Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 75 W Maximum Collector-Base Voltage |Vcb|: 700 V Maximum Collector-Emitter Voltage |Vce|: 400 V Maximum Emitter-Base Voltage |Veb|: 7. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 13003 Datasheet, Equivalent, Cross Reference Search Type Designator: 13003 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 20 W Maximum NYLSA 1 Pair D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A : Amazon. 5 0. We have a great online selection at the lowest prices with Fast & Free shipping on many items! 2N1304 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N1304 Material of Transistor: Ge Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F Transistor 3DD13009 = 13009 Designador de tipo: 3DD13009 Material do transistor: Si Polaridade: NPN Dissipação máxima de energia do coletor (Pc): 2 W Tensão máxima da base do coletor | Vcb |: 700 V Tensão máxima do coletor-emissor | Vce |: 400 V Tensão Base Máxima do Emissor | Veb |: 9 V Corrente máxima do coletor | Ic máx |: 12 A Máx. from China. Based on 6 reviews . Min. Cross Reference Search. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampCharger and Switch-mode power supplies 222FEATURES 2 NPN TO-3P D13009 Transistor High Voltage Power Switch Valve 2 Piec #Y1* Opens in a new window or tab. ,Ltd. Size:148K philips phe13003a. - MJE13009: Manufacturer: Part # Datasheet: Description: TABLE OF 2N SERIES TRANSISTOR EQUIVALENTS 2N1003 2N1004 ⇒ AF124 AF127 AF200 2N1005 2N1006 ⇒ BC168 BC238 BC548 2N1007 ⇒ 2N1548 AD149 AUY20 MPEG decompression - DA conversion to get analogue signal (unless you use digital display). Size:236K st st13005. C $27. ST13005 Transistor Equivalent Substitute - Cross-Reference Search ST13005 Datasheet (PDF) . 0. 6VCBO 200 V ICBO VCB=200V 2SC2312 Transistor Datasheet pdf, 2SC2312 Equivalent. Part #: D13009. Size:107K jdsemi 13001-a. Max. Size:51K philips 2n3019 cnv 2. 8 W Maximum D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A High Voltage Power Switching Transistor 2 Pieces : Amazon. , LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode 13005A Transistor Equivalent Substitute - Cross-Reference Search 13005A Datasheet (PDF) . Characteristic frequency ft_Hz: 4M. 2 A Tjⓘ - Maximum Junction Temperature: 150 °C BIGLIST1 Pair New D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A : Amazon. 0 2. ST13005High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications321 Electronic ballast for fluorescent lighting Switch mode power This transistor has several variants collectively called as “2N2222 type” and they are identical to the original 2N2222 transistor in terms of operation and functionality. 3815'28 TK7871. NOTES ON USING THIS BOOK It must be realised by all users of transistors, that it is impossible to guarantee absolute equivalents. , LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. Base 2. 30 3. An icon used to represent a menu that can be Description: Model: D13009 13009 Transistor High Positive And Negative Voltage And Power. Parts similar to the above transistor can be found by typing “bc547” into the Digi-Key search bar, or by typing in “bc547 transistor” in a search engine. R13005D www. 415. AUK is committed to quality and reliability, and it has obtained various certifications, including ISO 13005A Transistor Equivalent Substitute - Cross-Reference Search 13005A Datasheet (PDF) . D13009 VOLTAGE RANG 400 Volts High Voltage Switch Mode Application? High Speed Switching TO ‐220F ??? Suitable for Switching Regulator and Motor Control 3. MJE13009 Todos los transistores. Ikuti kami di. The data of Figure 1 is based on TC = 25C; TJ(pk) is Description: Model: D13009 13009 Transistor High Positive And Negative Voltage And Power. 2SB175 Datasheet. The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. 2SA726 Transistor Datasheet pdf, 2SA726 Equivalent. 4, §4. HIGH GAIN & COLLECTOR EFFICIENCY. ST13009 Transistor Equivalent Substitute - Cross-Reference Search ST13009 Datasheet (PDF) . Brand New. Select the department you LNT D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A High Voltage Power Switching Transistor 2 Pieces : Amazon. Model Number. Explore. Page: 6 Pages. 2N3904 is Transistor công suất NPN D13009K E13009L J13009 12A 400V TO-247 Mới Là dòng Transistor công suất cao thường sử dụng trong các bộ nguồn tổ ong, nguồn công suất cao. 6 (86) · USD 4. id – Memahami Persamaan Transistor 13009 dan Datasheetnya. SMD Transistor Code: J13009. 3 W |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V |Id|ⓘ - Maximum Drain Current: 0. 0A BVcbo Ic=1 mA ,Ie=0 BVceo Ic=10 mA ,Ib=0 BVebo Ie=1 mA ,Ic=0 . ST13009High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3Applications21 Switch mode power suppliesTO Lưu ý: Sản phẩm là hàng tháo máy đã qua sử dụng và có loại chân dài, chân cắt và thuộc nhiều lô hàng khác nhau. Only logged in customers who have std13003 high voltage fast-switching npn power transistor reverse pins out vs standard ipak (to-251) / dpak (to-252) packages medium voltage capability low spread of dynamic parameters minimum lot-to-lot spread for reliable operation very high switching speed surface-mounting dpak (to-252) power package in tape & reel (suffix High voltage fast-switching NPN power transistor June 2009: More results. 02 A Tjⓘ - Maximum Junction Temperature: 125 °C Rdsⓘ - Maximum Drain-Source On-State Resistance: 55 Ohm Transistors typically come with full or partial type numbers printed on the body of the part. The condition of being forward biased is when the base connected to the ground or having no supply on it, and as a signal is provided to base pin it goes reverse MMBT3904 Transistor Datasheet pdf, MMBT3904 Equivalent. Especially suitable for AF-driver stages and low power output stages. Fig. The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds Part #: E13009L. D13009K is a high voltage fast switching power transistor that falls under the category of NPN transistors. BC109 Datasheet. 2N2907A, NTE159M . This post describes D400 transistor pinout, equivalent, features, applications and other details about this transistor. UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case. . The internal circuit contains two Part #: D13009. High-frequency small-signal equivalent circuit model Reading assignment: Howe and Sodini, Ch. - Switching power supply core accessories. 1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. BJT; MOSFET; IGBT; SCR; SMD-códigos; Cajas; APPS MJE13009 . 1 - Example of markings on a transistor. Collector MJE13007 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITYAPPLICATIONS SWITCHING REGULATORS MOTOR CONTROLDESCRIPTION32The MJE13007 is a silicon multiepitaxial mesa1NPN power transistor mounted in Jedec TO-220plastic package. Maximum Collector A high on/off ratio up to ~400% is observed. MMBT3904 Datasheet. economiza frete Em carrinhos de compras. designed for use as audio amplifiers and drivers utilizing 2SD1859 Transistor Equivalent Substitute - Cross-Reference Search 2SD1859 Datasheet (PDF) . Principales características Número de Parte: FJP13009 Código: J13009 Material: Si Polaridad de transistor: NPN ESPECIFICACIONES MÁXIMAS Disipación total del dispositivo (Pc): 100 W Tensión colector-base (Vcb): 700 V Tensión colector-emisor (Vce): 400 V 13001-A Transistor Equivalent Substitute - Cross-Reference Search 13001-A Datasheet (PDF) . Free shipping. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. Hoja de especificaciones. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA D400 or 2SD400 is an NPN transistor available in TO-92MOD or TO-92LM package. It should be noted that the equivalents quoted in columns 5 to 9 of this UNISONIC TECHNOLOGIES CO. Select the department you C2K 1 Pair D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A : Amazon. pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6090DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1500V (Min)(BR)CEOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV transistor k3568 equivalente; transistor rjp30e2 equivalente; transistor rjh30e2 equivalente; transistor mac97a8 ou equivalente; Eletrônicos, Áudio e Vídeo. 5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Millimeter Complementary Pair with 2SA720 REF. Package. 4. [2SC2999] High fT MJ15003 NPN Transistor: Datasheet, Pinout, and Equivalent. 51CLASSIFICAT 1402 Transistor Equivalent Substitute - Cross-Reference Search 1402 Datasheet (PDF) 0. It is a semiconductor device and it comes in two general types: the Bipolar Junction Transistor (BJT) and the 2SK125 MOSFET. Base (B) 2. D13009K TRANSISTOR Datasheet pdf POWER Equivalent, Catalog. 7A) 2SD1767 / 2SD1859 External dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767high current, IC=0. FJP13009 - High-Voltage Fast-Switching NPN Power Transistor Author: Fairchild Semiconductor Subject: FJP13009 - High-Voltage Fast-Switching NPN Power Transistor Keywords: FJP13009, High-Voltage Fast-Switching NPN Power Transistor Created Date: 9/15/2014 4:16:24 PM TABLE OF A SERIES TRANSISTOR EQUIVALENTS A100 ⇒ 2SA218 AF124 AF200 A1001 ⇒ 2SA1386 2SA908 2SB555 A1002 ⇒ 2SA1386 2SA908 2SB555 MPEG decompression - DA conversion to get analogue D13009K NPN Transistor Datasheet, Pinout, Power Ratings Applications The Engineering Projects, Description:, Model: D13009, 13009 transistor high positive and negative voltage and Good operating characteristics, easy to. Select the department you want to search in. Principales características. How To Use MJE13001. MJ15003 Transistors: Bipolar Junction Transistors (BJT) General configuration and definitions The transistor is the main building block “element” of electronics. 13003 Transistor Datasheet pdf, 13003 Equivalent. Type. 5pcs D13009K TO-3P D13009 TO3P 13009K. BJT; MOSFET; IGBT; SCR; isc N-Channel MOSFET Transistor AOB12N50FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0 2SB176 Transistor Datasheet pdf, 2SB176 Equivalent. Top Rated Seller Top Rated Seller proutoparts (972) 99. Size:41K st msc81402. 5A; Max Collector-Emitter Voltage (V CE): 150V; Max Collector-Base Voltage (V CB): 150V; Max Emitter-Base Voltage (VEBO): 5V Max Collector Dissipation (Pc): 25 Watt Max Transition Frequency (fT): 4 MHz Minimum & Maximum DC Current Gain (h FE): 40 C3198 Transistor Equivalent Substitute - Cross-Reference Search C3198 Datasheet (PDF) . Size:170K inchange semiconductor 2sc6090. Equiv. ABSOLUTE MAXIMUM RATINGS(T MJE13009X9(BR3DD13009X9P) Rev. MSC81402RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIERS APPLICATIONSPRELIMINARY DATA. A darlington transistor is a special type of transistor whos internal circuitry is different from a normal transistor. in: Home Improvement Skip to main content. Other NPN Transistors. Filtros. Order this documentMOTOROLAby BD135/DSEMICONDUCTOR TECHNICAL DATABD135BD137Plastic Medium Power SiliconBD139NPN Transistor. Size:208K utc mje13001. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SB176 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SB176 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. C3198 NPN Epitaxial Silicon Transistor TO-92 Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector 2SC1318 0. 0053Ω : Caps TO220AB: AUIRF1405 N MOSFET 330 55 20 4 169 175 170 190 1210 0. This notable File Size: 128Kbytes. File Size: 546Kbytes. 5-4. Below is the list of popular transistors that can be used as a replacement for 2N3904. Daftar. Parameters and Characteristics S Series NPN Silicon Power Transistors. Size:185K st 2sd1047. 6028. Alternative to BD139 Transistor. HP Gratis 0 Rupiah iPhone Sandal Selop Pria Polo Lion Giordano . 3DD207 Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS MJ3001 Datasheet, Equivalent, Cross Reference Search Type Designator: MJ3001 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 150 W BC109 Transistor Datasheet pdf, BC109 Equivalent. All features. 3 A Max Elegant Essence D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A High Voltage Power Switching Transistor 2 Pieces : Amazon. cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co. 2 2SC1740 Transistor Datasheet pdf, 2SC1740 Equivalent. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22 Description: Model: D13009 13009 Transistor High Positive And Negative Voltage And Power. Temperatura de The MJE13009 is a high-voltage, high-speed power transistor designed for specific applications such as switching regulators, inverters, and motor controls. Quantity. Select the KSE13009H1 npn transistor complementary pnp, replacement, pinout, pin configuration, substitute, smd marking code E13009-1, equivalent, datasheet BD139, BD Transistor SeriesIncluded in TO-126 sheath BD139,BJT NPNtype is a BD139 Transistor has collector current and 80V 2SA1019 Transistor Equivalent Substitute - Cross-Reference Search 2SA1019 Datasheet (PDF) 8. 2SD1047High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oCApplication Power supply 321DescriptionTO-3PThe device is a NPN transistor June 2009 Doc ID 11491 Rev 3 1/11 11 ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Switch mode power supplies Description The device is manufactured using high voltage isc silicon npn power transistor jilin sino-microelectro 3dd13009k-o-c-n-b 546kb / 5p: high voltage fast-switching npn power transistor 3dd13009m 512kb / 5p: high voltage fast-switching npn power transistor 3dd13009m-o-c-n-b 512kb / 5p: high voltage fast-switching npn power transistor 3dd13009n 366kb / 7p: high voltage fast-switching npn All Transistors Datasheet. Emitter (E) 1. bantuan; Bahasa Indonesia. a transistor: average junction temperature and second breakdown. D13009K, D13009, SBW13009S, BR13009 Thông số kỹ thuật: - Mã sản phẩm: D13009K - Phân loại: Transistor nghịch NPN - Điện áp cực góp phát: 400V - 2N2222A Equivalent Transistors. Size:278K utc mje13002. BD139 Transistor Overview BC547 Equivalent Transistors. KSB13003CR: 912Kb / 6P: High Voltage Switch Mode Optimize JFET selection with InterFET's precise cross-reference tool. 2SC1845 Datasheet. Model: D13009. 2 W d13009 transistor equivalent › BD139 Transistor Pinout, Features, Equivalent Datasheet. Due to its number of advantages and low Result (Equivalent transistors) Type: Code: Pol N: Struct MOSFET: Pd 200W: Vds 55V: Vgs 20v: Vgs(th) Vgs(off) Id 133A: Tj: Qg: Tr: Coss: Rds 0. Size:227K toshiba 2sa1015. Top Rated Seller Top Rated Seller yunhefly (132) 100%. 0045 TO220AB: AUIRF3805 N MOSFET 300 55 20 4 210 175 190 13001-A Transistor Equivalent Substitute - Cross-Reference Search 13001-A Datasheet (PDF) . BASE power switching applications 2. Tap on the category links below for the associated return window and exceptions (if any) for returns. 01. 50 out of 5 based on 6 customer ratings (6 customer reviews) Availability: In stock. Size:101K onsemi mj15003 mj15004. : Shipping I just entered "transistor" (without quotes) in the search box at the top level, then clicked on "Transistors (BJT) - Single (13,797 items)" and it took me to the transistor search page above. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 13003 Datasheet, Equivalent, Cross Reference Search Type Designator: 13003 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 20 W 2SC1000 Transistor Datasheet pdf, 2SC1000 Equivalent. Base 3. 25 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V |Id|ⓘ - Maximum Drain Current: 5. 2SD2390 Transistor Explained / Description: 2SD2390 also searched with D2390 is quite an interesting darlington transistor. Bitte keine Sonderzeichen, Leerzeichen, Bindestriche oder Wildcards eingeben. 34. pdf 2SC4468Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC4468 Unit Symbol Conditions 2SC4468 Unit0. in: Electronics. 15 · In stock. A 4. Datasheet. 2SC2312 Datasheet. Ref. - Suitable for switching power supply, computer power, industrial power supply, power supply manufacturers and maintenance shop most commonly used components, ect. Description: High Voltage Switch Mode Applications. 06 Rev. Seller Centre Mulai Berjualan. Download. 3 W Maximum 7. PHE13003ANPN power transistorRev. EN. FJP13009 Datasheet, Equivalent, Cross Reference Search. 2SC1000 Datasheet. New. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS E13005-225 Datasheet, Equivalent, Cross Reference Search Type Designator: E13005-225 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 70 W Vintage Gear Transistor Replacements 2SA493 → KSA992 2SA497 → KSA1013 2SA564A > KSA992FBU 2SA606 → 2N5416 2SA628 → KSA1013 *watch pin outs 2SA640 → KSA992 2SA720 → KSA1013 or KSA1220 *check voltages 2SA722 → KSA992 2SA725 → KSA992 2SA726 → KSA992 2SA733 → KSA733 or KSA992 ksa733 and ksc945 should be MENT D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A High Voltage Power Switching Transistor 2 Pieces . High Voltage Fast-Switching NPN Power Transistor. 1 Results. Features / Technical Specifications: Package Type: TO-92 Transistor Type: NPN Max Collector Current(I C): 100mA; Max Collector-Emitter Voltage (V CE): 45V; Max Collector-Base Voltage (V CB): 45V; Max Emitter-Base Voltage (VEBO): 5V Max Collector Dissipation (Pc): 625 mW Max Transition Frequency (fT): 100 MHz Minimum & Maximum DC Current Gain (h 3DD207 Transistor Datasheet pdf, 3DD207 Equivalent. 1 W 2SC3858 Transistor Datasheet pdf, 2SC3858 Equivalent. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. Mobiles & Tablets. 0 Ampere D13009 VOLTAGE RANG 400 Volts Shop ACRA D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A High Voltage Power Sw Transistor 2 Pieces online at best prices at desertcart - the best international shopping platform in Australia. File Size: 453Kbytes. 2N2907(PNP), 2N3904(PNP), 2N3906 (PNP), BC637, S9014, BC148, 2N4403, MPS2222, PN2222, KN2222, KTN2222 . High-Voltage Capability The FJP13009 is a 700 V, 12 A NPN silicon epitaxial pla-. If the knob is stiff, try some contact/control cleaner/lube; it did wonders for mine! Learn how to operate a 'scope, and learn 2N3019 Transistor Equivalent Substitute - Cross-Reference Search 2N3019 Datasheet (PDF) . TO-3ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-Base 2SB175 Transistor Datasheet pdf, 2SB175 Equivalent. AMERICAN American equivalent () near equivalent 9. 2SC1061 NPN Transistor Datasheet, Pinout, Features Applications The Engineering Projects MJE13007 NPN Bipolar Power Transistor: Equivalent, Datasheet 2SC4468 Transistor Equivalent Substitute - Cross-Reference Search 2SC4468 Datasheet (PDF) . 2 Pieces of D13009K Transistor. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampCharger and Switch-mode power supplies 222FEATURES 2 . Brief Description on BC547. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS TT2190 Datasheet, Equivalent, Cross Reference Search Type Designator: TT2190 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 35 W Maximum We have a lot of products and only show a small number of products on the website. The FJP13009 is available with multiple hFE bin classes for ease of UNISONIC TECHNOLOGIES CO. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. File Size: 307Kbytes. 70 -D 3. Small signal amplification in Radio and TV. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. Select Entdecke 5PCS D13009K TO-3P D13009 POWER TRANSISTOR in großer Auswahl Vergleichen Angebote und Preise Online kaufen bei eBay Kostenlose Lieferung für viele Artikel! IRA WITH WORD DWELL IN COMFORT D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A High Voltage Power Switching Transistor 2 Pieces : Amazon. 13005 Transistor Equivalent Substitute - Cross-Reference Search 13005 Datasheet (PDF) . FEATURES * Fast-Switching And High Equivalent . Dalam artikel ini, rekomend. This post describes 13009 transistor pinout, equivalents, uses, specs, features, explanation, where and 3DD13009 Transistor Datasheet pdf, 3DD13009 Equivalent. The equivalant transistors are BC549, 2N2222, 2N3904, 2N3906, BC546, BC548. The bipolar junction transistors are current-controlled FJP13009 . Size:192K jmnic 2sc4468. It can 7. Rs 80. , the transistor must not be subjected to greater dissipation than the curves indicate. 16 shipping . BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS TIP41 Datasheet, Equivalent, Cross Reference Search Type Designator: TIP41 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 65 W 12N50 Transistor Datasheet, 12N50 Equivalent, PDF Data Sheets. Type Designator: FJP13009. Transistor 13009 equivalente. Books Movies, Music and Video Games. FEATURES * Fast-Switching And High high voltage fast-switching npn power transistor 3dd13009nl 363kb / 7p: high voltage fast-switching npn power transistor inchange semiconductor 3dd13009nl 326kb / 3p: isc silicon npn power transistor jilin sino-microelectro 3dd13009nl-o-ab-n-b 363kb / 7p: high voltage fast-switching npn power transistor 3dd13009nl-o-an-n-b 363kb / 7p: high voltage fast-switching Transistor Equivalents - Handbook reference for transistor equivalents for substitution. Q1 is 2N918 NPN transistor but it is not available for me. 2SC3858 Datasheet. All MOSFET. Delivering to Mumbai 400001 Update location Home & Kitchen. 13003 Datasheet. JAPANESE Japanese equivalent 10. unit:mm Very small-sized package permitting sets to be small-2033sized and slim. Add to cart. Brief Description. The MJE13009 is a multiepitaxial mesa NPN transistor. 36 0. Parts labeled as "pulls" or "pulled" have been previously installed and are made by the original Let us fix the problem for We will . 2SB176 Datasheet. Frete grátis. pdf. R13001-A www. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEAT 0. 81E 0. Search Amazon. in: Home Improvement Wenn es nicht gut funktioniert oder. JMnic Product SpecificationSilicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base . Good Operating Characteristics Easy To Breakdown. Original Reconditioned. TT2190 Datasheet. Transistor Database. 80. 37. Size:69K rohm 2sd1767 2sd1859. • High Switching Speed. 2N4037 Datasheet. Die Eingabe der Bauteil-Bezeichnung muss nicht komplett sein! Replacement and Equivalent: 2SD1027, 2SD1123, 2SD1515, BDV67D . 0053 TO220AB: AUIRF2907Z N MOSFET 300 75 20 4 170 175 180 140 970 0. 3. Size:181K fairchild semi fjp13009. Locate equivalent JFETs & identify suitable replacements effortlessly that ensures compatibility & sourcing. Page: 4 Pages. Package Type: TO-220 Transistor Type: NPN Max Collector Current(I C): 1. The next most important parameter is possible "Ft" - the effective maximum operating frequency (although the transistor is of no use at that frequency UNISONIC TECHNOLOGIES CO. Description: High Voltage Fast-Switching NPN Power Transistor. com. USE 01 amplifier 02 high frequency amplifier 03 high power high frequency amplifier 04 light-sensitive amplifier 05 multiple amplifier 06 high power amplifier 07 switching amplifier 08 multiple switching amplifier 09 high power switching amplifier 10 switching transistor 11 high frequency 2SD1047 Transistor Equivalent Substitute - Cross-Reference Search 2SD1047 Datasheet (PDF) . 13009 NPN Silicio Product overview. Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS C100 PNPD100 NPNTO-92Plastic PackageECBThese are complementary transistors for medium power R13009 www. Manufacturer: JILIN SINO-MICROELECTRONICS CO. All Transistors. Semicondutores. 13009 NPN Silicio 7, 8. 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. designed for use as audio amplifiers and drivers utilizing Rekomend. Ada Gratis Ongkir, Promo COD, & Cashback. 13009 transistor D13009K Transistor D13009 NPN TO3-P Crystal Valve 3 Pins 100W 12A High Voltage Power Switching Transistor 2 Pieces : Amazon. 70B 4. Among these transistors, P2N222A is the main transistor, which is available in the TO-92 package made of either plastic or epoxy. ucb uce ueb PAR Box Caixa Pinos Pinout; KSE13004. TO-220It is are 2300 MOSFET. 125 W 2SC1845 Transistor Datasheet pdf, 2SC1845 Equivalent. Cek Review Produk Terlengkap. RUGGED OVERLAY The S9012 is a general purpose, low power PNP transistor, manufactured by various companies like Fairchild Semiconductor. Ordering number:EN931DNPN Epitaxial Planar Silicon Transistor2SC2999HF Amplifier ApplicationsFeatures Package Dimensions FBET series. nfuycxua zknqnask rteox ofwa zvayt vml pjga vugen rmp stuy